TCSA562 Datasheet, PDF (1/4 Pages) Rectron Semiconductor – TO-92 PLASTIC PACKAGE PNP SILICON EPITAXIAL TRANSISTOR ROHS

TCSA562*
TO-92 PLASTIC PACKAGE
PNP SILICON EPITAXIAL TRANSISTOR ROHS
Audio Frequency Low Power Amplifier Applications.
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
VALUE
Collector-Base Voltage
V_CBO
35
Collector-Emitter Voltage
V_CEO
30
Emitter-Base Voltage
V_EBO
5
Collector Current
I_C
500
Base Current
I_B
100
Collector Power Dissipation
P_C
625
Operating And Storage Junction
T_j, T_stg
-55 to +150
Temperature Range
ECB
UNITS
V
V
V
mA
mA
mW
ºC
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector Cut Off Current
I_CBO
V_CB = 35V, I_E = 0
Emitter Cut Off Current
I_EBO
V_EB = 5V, I_C = 0
DC Current Gain
*hFE I_C = 100mA, V_CE = 1V
70
**hFE I_C = 400mA, V_CE = 6V
25
Collector Emitter Saturation Voltage V_CE(sat) I_C = 100mA, I_B = 10mA
Base Emitter Voltage
V_BE(on) I_C = 100mA, V_CE = 1V
TYP MAX UNITS
100
nA
100
nA
240
0.25
V
1.0
V
DYNAMIC CHARACTERISTICS
Collector Output Capacitance
C_ob
V_CB = 6V, I_E = 0,
13
pF
f = 1MHz
Transition Frequency
f_t
V_CE = 6V, I_C = 20mA
200
MHz
*^{CLASSIFICATION}
*hFE
**hFE
O : 70 - 140
O : 25 Min
Y : 120 - 240
Y : 40 Min