RS801 Datasheet, PDF (1/2 Pages) Rectron Semiconductor – SINGLE-PHASE SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 8.0 Amperes)

RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SINGLE-PHASE SILICON BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 8.0 Amperes
RS801
THRU
RS807
FEATURES
* Low leakage
* Low forward voltage
* Mounting position: Any
* Surge overload rating: 250 amperes peak
* Ideal for printed circuit boards
* High forward surge current capability
MECHANICAL DATA
* UL listed the recognized component directory, file #E94233
* Epoxy: Device has UL flammability classification 94V-O
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
.700 (17.8)
.600 (16.8)
.935 (23.7)
.895 (22.7)
AC
RS-8
.15 x .23L
(3.8 x 5.7L)
HOLE THRU
.300
(7.5)
.780 (19.8)
.740 (18.8)
MIN.
1.00
(25.4)
.140
(3.5)
.052 (1.3)
.048 (1.2) ^DIA.
.220 (5.6)
.180 (4.6)
.280 (7.1)
.268 (6.8)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At TA = 25^oC unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Output Current at Tc = 75^oC
with heat sink
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load
Operating and Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
IO
RS801 RS802 RS803 RS804 RS805 RS806 RS807 UNITS
50
100
200
400
600
800 1000 Volts
35
70
140
280
420
560
700 Volts
50
100
200
400
600
800 1000 Volts
8.0
Amps
IFSM
TJ,TSTG
250
-55 to + 150
Amps
0_C
ELECTRICAL CHARACTERISTICS (At TA = 25^oC unless otherwise noted)
CHARACTERISTICS
Maximum Forward Voltage Drop per element at 8.0A DC
Maximum Reverse Current at Rated
DC Blocking Voltage per element
@TA = 25^oC
@TC = 100^oC
SYMBOL
VF
IR
RS801
RS802
RS803
RS804
1.1
10
RS805
RS806
RS807 UNITS
Volts
uAmps
0.2
mAmps
2001-5