RS3501M Datasheet, PDF (1/2 Pages) Rectron Semiconductor – SINGLE-PHASE SILICON BRIDGE RECTIFIER

RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SINGLE-PHASE SILICON BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 35 Amperes
RS3501M
THRU
RS3507M
FEATURES
* Low leakage
* Low forward voltage
* Mounting position: Any
* Surge overload rating: 400 amperes peak
* Ideal for printed cikcuit boakds
* High forward surge current capability
MECHANICAL DATA
* UL listed the recognized component directory, file #E94233
* Epoxy: Device has UL flammability classification 94V-O
1.193 (30.3)
1.169 (29.7)
.150 (3.8)
.134 (3.4)
RS-35M
.189 (4.8)
.173 (4.4)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
.106 (2.7)
.096 (2.3)
.094 (2.4)
.078 (2.0)
.114 (2.9)
.098 (2.5)
.043 (1.1)
.035 (0.9)
.031 (0.8)
.023 (0.6)
.402 (10.2) .303 (7.7) .303 (7.7)
.386 (9.8) .287 (7.3) .287 (7.3)
Dimensions in inches and (millimeters)
-_{MAXIMUM RATINGS (At TA = 25}^o_{C unless otherwise noted)}
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Output Current at Tc = 100^oC
with heatsink
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load
Operating and Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
RS3501M RS3502M RS3503M RS3504M RS3505M RS3506M RS3507M UNITS
50
100
200
400
600
800 1000 Volts
35
70
140
280
420
560
700 Volts
50
100
200
400
600
800 1000 Volts
IO
35
Amps
IFSM
400
Amps
TJ,TSTG
-55 to + 150
0_C
ELECTRICAL CHARACTERISTICS (At TA = 25^oC unless otherwise noted)
CHARACTERISTICS
Maximum Forward Voltage Drop per element at 17.5A DC
Maximum Reverse Current at Rated
DC Blocking Voltage per element
@TA = 25^oC
@TC = 100^oC
SYMBOL
VF
IR
RS3501M RS3502M RS3503M RS3504M RS3505M RS3506M RS3507M UNITS
1.1
Volts
10
uAmps
0.2
mAmps
2001-9