RB501V-40 Datasheet, PDF (1/3 Pages) Rohm – Schottky barrier diode

RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SCHOTTKY DIODES
RB501V-40
FEATURES
* High current rectifier Schottky diode
* ^{Low voltage,low inductance}
* ^{For power supply}
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.004 grams
SOD-323
.071(1.80)
.063(1.60)
.106(2.70)
.098(2.50)
.055(1.40)
.047(1.20)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25^OC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS (@TA=25^OC unless otherwise noted)
RATINGS
SYMBOL
Maximum Peak reverse voltage
VRM
Maximum DC reverse voltage
VR
Maximum Peak Forward Surge Current
IFSM
Mean rectifying current
IO
Operating and Storage Temperature Range
TJ,TSTG
ELECTRICAL CHARACTERISTICS ( @ TA = 25^oC unless otherwise noted )
CHARACTERISTICS
SYMBOL
Reverse voltage leakage current
Forward voltage
Diode Capacitance
(VR=10V)
IR
(IF=100mA)
VF
(IF=10mA)
(VR=10V,f=1MHz)
CT
REF .019(0.46)
MAX.039(1.00)
.004(.10)
.000(.00)
Dimensions in inches and (millimeters)
MIN.
-
-
-
-
RB501V-40
45
40
1
0.1
-55 to + 125
TYP.
-
-
-
6
MAX.
30
0.55
0.34
-
UNITS
Volts
Volts
Amps
Amps
O_C
UNITS
µA
V
pF
2006-3