R1200 Datasheet, PDF (1/2 Pages) Zowie Technology Corporation – HIGH VOLTAGE SILICON RECTIFIER

RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
HIGH VOLTAGE SILICON RECTIFIER
R1200
THRU
R2000
VOLTAGE RANGE 1200 to 2000 Volts CURRENT 0.2 to 0.5 Ampere
FEATURES
* Low cost
* Low leakage
* Low forward voltage drop
* High current capability
DO-41
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: Device has UL flammability classification 94V-O
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.35 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS (At TA = 25^oC unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Volts
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at TA = 50^oC
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note)
Operating and Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
IO
IFSM
CJ
TJ, TSTG
ELECTRICAL CHARACTERISTICS (At TA = 25^oC unless otherwise noted)
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 0.5A/0.2A DC
Maximum DC Reverse Current
@TA = 25^oC
at Rated DC Blocking Voltage
@TA =100^oC
Maximum Full Load Reverse Current Average, Full Cycle
.375”, (9.5mm) lead length at TL = 75^oC
NOTES : Measured at 1 MHZ and applied reverse voltage of 4.0 volts.
SYMBOL
VF
IR
R1200
1200
840
1200
R1200
1.0 (25.4)
MIN.
.034 (0.9) _DIA.
.028 (0.7)
.205 (5.2)
.166 (4.2)
1.0 (25.4)
MIN.
.107 (2.7)
DIA.
.080 (2.0)
Dimensions in inches and (millimeters)
R1500
1500
1050
1500
500
R1800
1800
1260
1800
30
30
-65 to + 175
R2000
2000
1400
2000
200
UNITS
Volts
Volts
Volts
mAmps
Amps
pF
0_C
R1500
R1800
2.0
5.0
50
30
R2000
3.0
UNITS
Volts
uAmps
uAmps
2001-6