MPSA06 Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN general purpose transistor

TECHNICAL SPECIFICATION
MPSA06
Plastic Package Transistors (NPN)
Absolute Maximun Ratings (Ta=25^oC)
Items
Collector - Base
Collector - Emitter
Emitter - Base
Power Dissipation
Collector Current
Junction to Case
Junction to Ambient
Symbol Ratings
V_CBO
80
V_CEO
80
V_EBO
4
P_D
625
I_C
500
R_{th (JC)}
83.3
R_{th (JA) (1)} 200
(1) Device soldered to a typical PCB
Unit
V
V
V
mW
mA
°C/W
° C/W
Pin Configuration
Code Style
TO - 92
Pin 1
Collector
Pin 2
Base
Pin 3
Emitter
Dimensions
Electrical Characteristics (Ta=25^oC)
Description
Collector - Emitter Breakdown Voltage
Emitter - Base Voltage
Collector - Cut off Current
DC Current Gain
Collector Emitter (sat) Voltage
Base Emitter (on) Voltage
Symbol
Test Conditions
Min
V_CEO I_C = 1mA, I_B = 0
80
V_EBO I_E = 100uA, I_C = 0
4
I_CEO V_CE = 60V, I_B = 0
I_CBO V_CB = 80V, I_E = 0
h_FE
I_C = 10mA, V_CE = 1V
I_C = 100mA, V_CE = 1V
100
100
V_{CE (sat)} I_C = 100mA, I_B = 10mA
V_{BE (on)} I_C = 100mA, V_CE = 1V
TO- 92
D IM M IN M A X
A
4 .3 2
5 .3 3
B
4 .4 5
5 .2
C
3 .1 8
4 .1 9
D
0 .4 1
0 .5 0
E
0 .3 5
0 .5 0
F
5q
5q
G
1 .1 4
1 .4 0
H
1 .1 4
1 .5 3
K
1 2 .70
-
All dimensions in mm
Typ
Max Units
V
V
0.1
µ^A
0.1
µ^A
0.25
V
1.2
V
Dynamic Characteristics (Ta=25^oC)
Current gain Bandwidth Product
f_T
I_C = 10mA V_CE = 2V
f = 100 MHz
100
MHz