MMBTA42 Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN high-voltage transistor

MMBTA42
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
FEATURES
* High breakdown voltage
* Low collector-emitter saturation voltage
* Complementary to MMBTA92 (NPN)
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS ( @ TA = 25^oC unless otherwise noted )
RATINGS
Collector Current-Continuous
Collector Power Dissipation
Max. Operating Temperature Range
Storage Temperature Range
SYMBOL
IC
PC
TJ
TSTG
ELECTRICAL CHARACTERISTICS ( @ TA = 25^oC unless otherwise noted )
CHARACTERISTICS
SYMBOL
Collector-base breakdown voltage (IC=100uA,IE=0)
Collector-emitter breakdown voltage (IC=1mA,IB=0)
Emitter-Base breakdown voltage (IE=100uA,IC=0)
Collector cut-off current (VCB=200V,IE=0)
Emitter cut-off current (VEB=5V,IC=0)
(VCE=10V,IC=1mA)
DC current gain
(VCE=10V,IC=10mA)
(VCE=10V,IC=30mA)
Collector-emitter saturation voltage (IC=20mA,IB=2mA)
Base-emitter saturation voltage (IC=20mA,IB=2mA)
Transition frequency (VCE=20V,IC=10mA,f=30MHz)
Note: "Fully ROHS Complant", "100% Sn plating (Pb-free)".
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(sat)
fT
SOT-23
COLLECTOR
3
1
BASE
2
EMITTER
0.006(0.15)
0.003(0.08)
0.055(1.40)
0.047(1.20)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
0.019(2.00) ¹
0.071(1.80)
0.118(3.00)
3 ^0.110(2.80)
2
Dimensions in inches and (millimeters)
MIN.
300
300
5
-
-
60
100
60
-
-
50
VALUE
0.3
350
150
-55 to +150
TYP.
-
-
-
-
-
-
-
-
-
-
-
UNITS
A
mW
o_C
o_C
MAX.
-
-
-
0.25
0.1
-
200
-
0.2
0.9
-
UNITS
V
V
V
uA
uA
-
-
-
V
V
MHz
2007-5