MMBT5550 Datasheet, PDF (1/5 Pages) Zowie Technology Corporation – HIGH VOLTAGE TRANSISTOR NPN SILICON

MMBT5550
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
FEATURES
* Power dissipation
PCM: 0.225 W(Tamb=25^OC)
* Collector current
ICM: 0.6 A
* Collector-base voltage
V(BR)CBO: 160 V
* Operating and storage junction temperature range
TJ,Tstg: -55 ^OC to + 150^OC
MECHANICA DATA
*Case: Molded plastic
*Epoxy: UL 94V-O rate flame retardant
*Lead: MIL-STD-202E method 208C guaranteed
*Mounting position: Any
*Weight: 0.008 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS (@ TA = 25^OC unless otherwise noted)
RATINGS
Max. Steady State Power Dissipation ⁽¹⁾ @TA=25^oC
Max. Operating Temperature Range
Storage Temperature Range
SYMBOL
PD
TJ
TSTG
ELECTRICAL CHARACTERISTICS (@ TA = 25^OC unless otherwise noted)
CHARACTERISTICS
SYMBOL
Thermal Resistance Junction to Ambient
RQJA
Notes : 1. Alumina=0.4*0.3*0.024 in. 99.5% alumina.
2. "Fully ROHS Compliant", "100% Sn plating (Pb-free)".
COLLECTOR
3
1
BASE
2
EMITTER
0.006(0.15)
0.003(0.08)
SOT-23
0.055(1.40)
0.047(1.20)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
0.019(2.00) ¹
0.071(1.80)
0.118(3.00)
3 ^0.110(2.80)
2
Dimensions in inches and (millimeters)
MIN.
-
VALUE
225
150
-55 to +150
TYP.
-
UNITS
mW
o_C
o_C
MAX.
417
UNITS
o_C/W
2007-5