MMBT3904 Datasheet, PDF (1/6 Pages) NXP Semiconductors – NPN switching transistor

MMBT3904
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
FEATURES
* Power dissipation
PCM 0.2 W(Tamb=25^OC)
* Collector current
ICM 0.2 A
* Collector-base voltage
V(BR)CBO: 60 V
* Operating and storage junction temperature range
TJ,Tstg: -55^OCto+150^OC
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGES ( @ TA = 25^oC unless otherwise noted )
RATINGS
Max. Steady State Power Dissipation ⁽¹⁾ @TA=25oC Derate above 25^OC
Max. Operating Temperature Range
Storage Temperature Range
SYMBOL
PD
TJ
TSTG
ELECTRICAL CHARACTERISTICS ( @ TA = 25^oC unless otherwise noted )
CHARACTERISTICS
SYMBOL
Thermal Resistance Junction to Ambient
R qJA
Notes : 1.Alumina=0.4*0.3*0.024in.99.5% alumina
2." Fully ROHS Compliant "," 100% Sn plating (Pb-free)".
COLLECTOR
3
1
BASE
2
EMITTER
0.006(0.15)
0.003(0.08)
0.055(1.40)
0.047(1.20)
0.020(0.50)
0.012(0.30)
SOT-23
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
0.019(2.00) ¹
0.071(1.80)
0.118(3.00)
3 ^0.110(2.80)
2
Dimensions in inches and (millimeters)
VALUE
300
150
-55 to +150
UNITS
mW
o_C
o_C
MIN.
-
TYP.
-
MAX.
417
UNITS
o_C/W
2007-5