MCL4448 Datasheet, PDF (1/1 Pages) Formosa MS – Switching Diode - Silicon epitaxial planar type

RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
MCL4448
1N4448 Micro-MELF SIGNAL DIODE
Absolute Maximum Ratings (Ta = 25°C)
ITEMS
Symbol Ratings Unit
Peak Reverse Voltage V_RM
Reverse Recovery
trr
Time
Power Dissipation
P
100
V
4
ns
500 mW
Forward Current
Junction Temp.
Storage Temp.
I_FM
500 * mA
Tj (-65 to 175) °C
T_stg (-65 to 175) °C
Mechanical Data
Items
Materials
Package
Micro MELF
Case
Hermetically sealed glass
Lead/Finish
Double stud/Solder Plating
Chip
Glass Passivated
0.079(2.0)
0.071(1.8)
Micro-MELF
0.049(1.25)
0.047(1.20)
0.008(0.2)
Units in mm
Ratings
Non-Repetive Peak Reverse Voltage
Minimum Breakdown Voltage @I_R= 100mA
Peak Forward Surge Current @ t = 1.0s
Forward Continuous Current
Maximum Forward Voltage I_F= 100mA
Maximum Reverse Current
V_R= 20V
V_R= 75V
V_R= 20V, T_j= 150 °C
Maximum Junction Capacitance
V_R= 0, f= 1 MHz
Maximum Reverse Recovery Time
I_F= 10mA, V_R= 6V, I_R= -1mA, R_L= 100Ω
Maximum Thermal Resistance
* Note: Device terminals at ambient temperature
Symbol
V_RM
B_V
I_FSM
I_FM
V_F
I_R
Cj
trr
R_θJA
Ratings
100
75
1*
500 *
1
25
5
30
4
4
300
Unit
V
V
A
mA
V
nA
µ^A
µ^A
pF
ns
K/W