LS4148 Datasheet, PDF (1/1 Pages) Vishay Siliconix – Silicon Epitaxial Planar Diodes

RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
LS4148
1N4148 Quadro MELF SIGNAL DIODE
Absolute Maximum Ratings (Ta=25_°C)
Items
Symbol Ratings Unit
Reverse Voltage
VR
75
V
Reverse Recovery trr
4
ns
Time
Power Dissipation
P
500 mW
3.33mW/_°C (25_°C)
Forward Current
IF
150
mA
Junction Temp.
Storage Temp.
Tj -65 to 175 _°C
Tstg -65 to 175 _°C
Mechanical Data
Items
Materials
Package
QUADRO MELF
Case
Hermetically sealed glass
Lead/Finish Double stud/Solder Plating
Chip
Glass Passivated
Cathode Identification
Qu ad ro
MEL F
1.5 +/-0.1
1.G7lass
3.5 +/- 0.2
Glass
Dimensions in millimeters
Electrical Characteristics (Ta=25_°C)
Ratings
Minimum Breakdown Voltage
@IR= 100uA
Peak Forward Surge Current
tp= 1_µsec.
Maximum Forward Voltage
IF= 10mA
Maximum Reverse Current
VR= 20V
VR= 75V
VR= 20V, Tj= 150_°C
Maximum Junction Capacitance
VR= 0, f= 1 MHz
Maximum Reverse Recovery Time
IF= 10mA, VR= 6V, IRR= 1mA, RL= 100_Ω
Maximum Thermal Resistance (on PC Board 50mm x 50mm x 1.6mm)
Maximum Rectification Efficiency
Vrf= 2V, f= 100MHz
Symbol
BV
IFsurge
VF
IR
Cj
trr
R_θJA
ην
Ratings
100
2
1.0
0.025
5.0
50
4
4
500
0.45
Unit
V
A
V
uA
pF
ns
°^C/W
%
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