GDSGA0-500E Datasheet, PDF (1/2 Pages) Rectron Semiconductor – STANDARD GPP CHIP - 100MIL

RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
GDSGA0-500E
GDSGA0-700E
GDSGA0-900E
GDSGA0-B00E
STANDARD GPP CHIP - 100MIL
PRODUCT SPECIFICATIONS
CHIPS FOR STD GPP/SOLDERING TYPE
TYPE: GDSGA0 SERIES
CHIP APPEARANCE
CHIP DIMENSIONS GDSGA0-500E GDSGA0-700E GDSGA0-900E GDSGA0-B00E
75mil 100mil
CHIP SIZE
Contact area
100 x 100 mils
75 x 75 mils
Total CHIP THICKNESS
11 mils
10.2mil ^11mil
SOLDERABLE
METALLIZATION
Ni / Au
FEATURES
* Silicon chip with Boron / Phosphorus dopants
* Solderable metallization Ni / Au
* Glass passivated junction
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum Average Forward Rectified Current
at Derating Case Temperature
SYMBOL GDSGA0-500E
VR
400
IO
Maximum Instantaneous Forward Voltage at 3A DC
Maximum Average Reverse Current
at Rated DC Blocing Voltage
@ TA=25^OC
@ TA=100^OC
Operating Temperature Range
Storage Temperature Range
VF
IR
TJ
TSTG
GDSGA0-700E
600
GDSGA0-900E
800
3
1.1
5
300
150
-55 to + 150
GDSGA0-B00E UNITS
1000
Volts
Amps
Volts
uAmps
0_C
0_C