FMMT4124 Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ NPN ）

RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
FMMT4124
FEATURES
* Power dissipation
PCM :
0.33
W (Tamb=25^OC)
* Collector current
ICM :
0.2
A
* Collector-base voltage
V(BR)CBO : 30
V
* Operating and storage junction temperature range
TJ,Tstg: -55^OC to +150^OC
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25^OC ambient temperature unless otherwise specified.
Single phase , half wave, 60HZ, resistive or inductive load.
For capacitive load, derate current by 20%.
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
SYMBOL
Collector-base breakdown voltage (IC= 10mA, IE=0)
V(BR)CBO
Collector-emitter breakdown voltage (IC= 1mA, IB=0)
Emitter-base breakdown voltage (IE= 10mA, IC=0)
V(BR)CEO
V(BR)EBO
Collector cut-off current (VCB= 20V, IE=0)
ICBO
DC current gain (VEB= 3V, IC= 0)
IEBO
Collector-emitter saturation voltage (VCE= 1V, IC= 2mA)
Base-emitter saturation voltage (IC= 50mA, IB= 5mA)
hFE
VCE(sat)
Base-emitter voltage ((IC= 50mA, IB= 5mA)
VBE(sat)
Transition frequency (VCE= 20V, IC= -10mA, f=100MHZ)
fT
Marking
Note 1: "Fully ROHS compliant", "100% Sn plating (Pb-free)".
SOT-23
COLLECTOR
3
BASE ₁
2
EMITTER
0.006(0.15)
0.003(0.08)
0.055(1.40)
0.047(1.20)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
1
0.019(2.00)
0.071(1.80)
3
2
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
MIN
TYP
30
-
25
-
5
-
-
-
-
-
120
-
-
-
-
-
300
-
ZC
MAX
-
-
-
0.05
0.05
360
0.3
0.95
-
UNITS
V
V
V
mA
mA
-
V
V
MHZ
2006-3