EFM101B Datasheet, PDF (1/2 Pages) Rectron Semiconductor – SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere

RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SURFACE MOUNT GLASS PASSIVATED
SUPER FAST SILICON RECTIFIER
VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere
FEATURES
* Glass passivated device
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* Weight: 0.09 gram
EFM101B
THRU
EFM106B
DO-214AA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At TA = 25^oC unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Volts
Maximum DC Blocking Voltage
Maximum Average Forward Current
at TA = 55^oC
Peak Forward Surge Current IFM (surge): 8.3 ms single half
sine-wave superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
EFM101B EFM102B EFM103B EFM104B EFM105B EFM106B UNITS
50
100
150
200
300
400
Volts
35
70
105
140
210
280
Volts
50
100
150
200
300
400
Volts
IO
1.0
Amps
IFSM
CJ
TJ, TSTG
30
15
-65 to + 175
Amps
10
pF
0_C
ELECTRICAL CHARACTERISTICS (At TA = 25^oC unless otherwise noted)
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TA = 25^oC
@TA =100^oC
Maximum Reverse Recovery Time (Note 1)
NOTES : 1. Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A.
2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts.
SYMBOL
VF
IR
trr
EFM101B EFM102B EFM103B EFM104B EFM105B EFM106B
0.95
1.25
5.0
100
UNITS
Volts
uAmps
35
nSec
2004-12
REV.A