DB3W Datasheet, PDF (1/5 Pages) Rectron Semiconductor – TRIGGER DIODES

TRIGGER DIODES
DB3W
FEATURES
* VBO: 32V/34V/40V VERSIONS
* Low Breakover Current
DO214AC(SMA)
DESCRIPTION
* ^{Molded plastic-JEDEC DO214AC case}
* Buit- in strain relief,ideal for Automated pick/place assembly
* Weight: 0.064 grams
MAXIMUM RATINGS (At TA = 25^oC unless otherwise noted)
RATING
Repetitive Peak On-State Current tp=20uA,F=100Hz
Power Dissipation (@ TA=50^oC)
Derate Above +50^oC
Storage Temperature Range
Junction Temperature
ELECTRICAL CHARACTERISTICS (At TA = 25^oC unless otherwise noted)
SYMBOL
ITRM
P
T S TG
TJ
RATING
SYMBOL
Breakover Voltage(Forward and Reverse)
VBO
at IBO,C=22nF**
Maximum Breakover Voltage Symmetry delta VBO= +VBO - -VBO C=22nF delta VBO
Minimum Dynamic Breakover Voltage delta I=IBO to IF=10mA (see Fig3) delta V+/-
Minimum Output Voltage* (see Fig 2)
VO
Peak Breakover Current at Breakorver Voltage* C=22nF**
IBO
Rise Time* (see Fig3)
tr
Leakage Current* VB=0.5VBO max (see Fig1)
IB
NOTES: 1. *Electrical characteristic applicable in both forward and reverse derections.
2.**Connected in parallel with the devices.
3. "Fully ROHS compliant", "100% Sn plating (Pb-free)".
.067 (1.70)
.051 (1.29)
.180(4.57)
.160(4.06)
.110 (2.79)
.086 (2.18)
.091 (2.31)
.067 (1.70)
.059 (1.50)
.035 (0.89)
.012 (.305)
.006 (.152)
.209 (5.31)
.185 (4.70)
.008 (.203)
.004 (.102)
Dimensions in inches and (millimeters)
VALUE
2
150
4.0
-40 to + 125
125
UNITS
A
mW
mW/^oC
o_C
o_C
VALUE
DB3W-1
Min
Max
30
34
+/-2
5
5
25
1.5
10
DB3W-2
Min
Max
28
36
100
UNITS
Volts
Volts
Volts
Volts
uA
uS
uA
2009-03
REV: O