DB151 Datasheet, PDF (1/2 Pages) Rectron Semiconductor – SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER

RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SINGLE-PHASE GLASS PASSIVATED
SILICON BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.5 Ampere
DB151
THRU
DB157
FEATURES
* Good for automation insertion
* Surge overload rating - 60 amperes peak
* Ideal for printed circuit board
* Reliable low cost construction utilizing molded
* Glass passivated device
* Polarity symbols molded on body
* Mounting position: Any
* Weight: 1.0 gram
MECHANICAL DATA
* UL listed the recognized component directory, file #E94233
* Epoxy: Device has UL flammability classification 94V-O
DB-1
.255 (6.5)
.245 (6.2)
.350 (8.9)
.300 (7.6)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
.335 (8.51)
.320 (8.12)
.020
(0.5)
.205 (5.2)
.195 (5.0)
.135 (3.4)
.115 (2.9)
.165 (4.2)
.155 (3.9)
.060
(1.5)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At TA = 25^oC unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Output Current at TA = 40^oC
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Operating and Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
IO
DB151 DB152 DB153 DB154 DB155 DB156 DB157 UNITS
50
100
200
400
600
800 1000 Volts
35
70
140
280
420
560
700 Volts
50
100
200
400
600
800 1000 Volts
1.5
Amps
IFSM
60
Amps
TJ,TSTG
-65 to + 150
0_C
ELECTRICAL CHARACTERISTICS (At TA = 25^oC unless otherwise noted)
CHARACTERISTICS
Maximum Forward Voltage Drop per Bridge
Element at 1.5A DC
Maximum Forward Voltage Drop per Bridge
DC Blocking Voltage per element
@TA = 25^oC
@TA = 125^oC
SYMBOL
VF
IR
DB151 DB152 DB153 DB154 DB155 DB156 DB157 UNITS
1.1
Volts
5.0
uAmps
0.5
mAmps
2002-1