CSL13003 Datasheet, PDF (1/5 Pages) Continental Device India Limited – NPN SILICON PLANAR EPITAXIAL, HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR

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NPN SILICON PLANAR EPITAXIAL,HIGH SPEED,
HIGH VOLTAGE SWITCHING TRANSISTOR
CSL13003
Applications
Suitable for Lighting, Switching Regulator and Motor Control
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter (sus) Voltage
Emitter Base Voltage
Collector Current Continuous
Peak
Power Dissipation @ T_a=25ºC
Derate Above 25ºC
Power Dissipation @ T_Lead=25ºC
Derate Above 25ºC
Operating And Storage Junction Temperature
Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
**I_CM
P_C
P_D
T_j, T_stg
VALUE
600
400
9.0
1.5
3.0
1.1
8.8
2.0
16
- 65 to +150
E^CB
UNIT
V
V
V
A
A
W
mW/ ºC
W
mW/ ºC
ºC
THERMAL RESISTANCE
Junction to Case, T_c=25ºC
Junction to Lead
Junction to Ambient in free air
R_{th (j-c)}
R_{th (j-L)}
R_{th (j-a)}
48.0
62.5
113.6
`
ºC/W
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Base Voltage
V_CBO
I_C=1mA, I_E=0
Collector Emitter (sus) Voltage
*V_{CEO (sus)}
I_C=10mA, I_B=0
Collector Cut Off Current
I_CBO
V_CB=600V_, I_E=0
V_CB=600V_, I_E=0, T_c=100ºC
Emitter Cut Off Current
I_EBO
V_EB=9V, I_C=0
DC Current Gain
*h_FE
I_C=0.3A, V_CE=2V (Note1)
I_C=0.5A, V_CE=2V
I_C=1A, V_CE=2V
Collector Emitter Saturation Voltage
*V_{CE (sat)}
I_C=0.5A, I_B=0.1A
I_C=1A, I_B=0.25A
I_C=1.5A, I_B=0.5A
I_C=1A, I_B=0.25A,T_c=100ºC
Base Emitter Saturation Voltage
*V_{BE (sat)}
I_C=0.5A, I_B=0.1A
I_C=1A, I_B=0.25A
I_C=1A, I_B=0.25A,T_c=100ºC
MIN TYP MAX
600
400
1.0
5.0
1.0
10
30
8.0
40
4.0
25
0.5
1.0
3.0
1.0
1.0
1.2
1.1
UNIT
V
V
mA
mA
mA
V
V
V
V
V
V
V
* Pulse Test: PW=300ms, Duty Cycle=2%
** Pulse Test: Pulse Width=5ms, Duty Cycle=10%