CSCL2482 Datasheet, PDF (1/4 Pages) Rectron Semiconductor – NPN SILICON PLANAR EPITAXIAL TRANSISTOR

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NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CSCL2482
High Voltage Switching and Amplifier Applications
CTV Horizontal Driver and Chroma Output Applications
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
VALUE
Collector Emitter Voltage
V_CEO
300
Collector Base Voltage
V_CBO
300
Emitter Base Voltage
V_EBO
7
Collector Current
I_C
100
Base Current
I_B
50
Collector Power Dissipation
P_C
900
Storage Temperature
T_stg
- 55 to +150
Junction Temperature
T_j
150
UNITS
V
V
V
mA
mA
mW
ºC
ºC
ABSOLUTE MAXIMUM RATINGS(T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN TYP MAX UNITS
Collector Cut Off Current
I_CBO
V_CB=240V, I_E = 0
1.0
mA
Emitter Cut Off Current
I_EBO
V_EB=7V, I_C = 0
1.0
mA
DC Current Gain
h_FE
V_CE=10V, I_C=4mA
20
V_CE=10V, I_C=20mA
30
150
Collector Emitter Saturation Voltage V_{CE (sat)}
I_C=10mA, I_B=1mA
1.0
V
Base Emitter Saturation Voltage
V_{BE (sat)}
I_C=10mA, I_B=1mA
1.0
V
Transition Frequency
f_T
V_CE=10V, I_C=20mA
50
MHz
Collector Output Capacitance
C_Ob
V_CB=20V, I_E=0, f=1MHz
3.0
pF