CMPSH-3A Datasheet, PDF (1/2 Pages) Rectron Semiconductor – SOT-23 PLASTIC-ENCAPSULATE SCHOTTKY DIODE

RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 PLASTIC-ENCAPSULATE
SCHOTTKY DIODE
CMPSH-3A
FEATURES
* Power dissipation
PD:
350
mW (Tamb=25^OC)
* Forward current
IF:
100
mA
* Reverse voltage
VR:
30
V
* Operating and storage junction temperature range
TJ,Tstg: -55^OC to +150^OC
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ^oC ambient temperature unless otherwise specified.
ELECTRICAL CHARACTERISTICS ( @ TA = 25^oC unless otherwise noted )
CHARACTERISTICS
Reverse Breakdown Voltage (IR=100mA)
Reverse voltage leakage current (VR=25V)
Reverse voltage leakage current (VR=25V, TA= 100^oC)
Forward voltage (IF=2mA)
Forward voltage (IF=15mA)
Forward voltage (IF=100mA)
SYMBOL
V(BR)
IR
VF
Diode capacitance (VR=0V, f=1MHz)
Ctot
Reverse recovery time (IF=IR=10mA, IRR=1.0mA, RL=100W)
trr
Marking
Note 1: "Fully ROHS compliant", "100% Sn plating (Pb-free)".
SOT-23
0.055(1.40)
0.047(1.20)
0.006(0.15)
0.003(0.08)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
0.019(2.00) ¹
0.071(1.80)
0.118(3.00)
3 ^0.110(2.80)
2
Dimensions in inches and (millimeters)
MIN
TYP
30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DB1
MAX
-
500
100
0.33
0.45
1
8
5
UNITS
V
nA
mA
V
V
V
pF
ns
2006-3