CCMBD914 Datasheet, PDF (1/2 Pages) Rectron Semiconductor – High Speed Switching Diodes

CCMBD914
PRODUCT SPECIFICATIONS
TYPE : High Speed Switching Diodes
CHIP APPEARANCE
CHIP SIZE
ANODE SIZE
CHIP THICKNESS
TOP METAL
BACK METAL
WAFER SIZE
SURFACE PASSIVATION
CCMBD914
11.6 mils ( 0.29 mm)
4.8 mil DIA ( 0.12 mm)
6-7 mil ( 0.15 - 0.18 mm)
ALUMINIUM
GOLD
4" DIA ( 100 mm)
Si3N4
ABSOLUTE MAXIMUM RATINGS (Ta = 25^oC)
WIRE BONDING TYPE
REVERSE BREAKDOWN VOLTAGE
CONTINUOUS REVERSE VOLTAGE
FORWARD CURRENT (d.c)
POWER DISSIPATION (Ta=25^OC)
V_BR 100 V
V_R 75 V
I_F 200mA
Pd 225mW
PEAK FORWARD SURGE
CURRENT
JUNCTION TEMPERATURE
IFRM 500 mA
Tj 150 deg C
ELECTRICAL CHARACTERISTIC(STa = 25^oC)
ITEM
FORWARD VOLTAGE
REVERSE CURRENT
REVERSE CURRENT
REVERSE BREAKDOWN VOLTAGE
DIODE CAPACITANCE
REVERSE RECOVERY TIME
@IR=1mA
SYMBOL
VF
IR
IR
BV
Cd
trr
MIN. TYP.
-
-
-
-
-
-
100 -
-
-
MAX. UNIT
CONDITION
1 V IF=10 mA
5 uA VR=75 V
25 nA VR=20 V
- V IR=100uA
4 p F VR=0V ,f=1MHz
-
-
4 n S IF=10mA, IR=60mA, RL=100ohms
Quality Assurance :
Yield Assurance : 90 %