C945 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – TO-92 Plastic-Encapsulate Transistors

C945
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
FEATURES
* Power dissipation
PCM :
0.2
W (Tamb=25^OC)
* Collector current
ICM :
0.15
A
* Collector-base voltage
V(BR)CBO : 60
V
* Operating and storage junction temperature range
TJ,Tstg: -55^OC to +150^OC
MECHANICAL DATA
* ^{Case: Molded plastic}
* ^{Epoxy: UL 94V-O rate flame retardant}
* ^{Lead: MIL-STD-202E method 208C guaranteed}
* ^{Mounting position: Any}
Weight: 0.008 gram
SOT-23
COLLECTOR
3
1
BASE
2
EMITTER
0.006(0.15)
0.003(0.08)
0.055(1.40)
0.047(1.20)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
0.019(2.00) ¹
0.071(1.80)
3
2
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS ( @ TA = 25^oC unless otherwise noted )
CHARACTERISTICS
SYMBOL
MIN
Collector-base breakdown voltage(IC= 1mA, IE=0)
V(BR)CBO
60
Collector-emitter breakdown voltage(IC= 0.1mA, IB=0)
V(BR)CEO
50
Emitter-base breakdown voltage(IC= 0.1mA, IB=0)
V(BR)EBO
5
Collector cut-off current(VCB= 60V, IE=0)
Collector cut-off current(VCB= 45V, IE=0)
ICBO
-
ICEO
-
Emitter cut-off current(VEB= 5V, IC=0)
IEBO
-
DC current gain(VCE= 6V, IC= 1mA)
DC current gain(VCE= 6V, IC= 0.1mA)
130
hFE
40
Collector-emitter saturation voltage(IC=100 mA, IB= 10mA)
VCE(sat)
-
Base-emitter saturation voltage(IC= 100 mA, IB= 10mA)
VBE(sat)
-
Base-emitter voltage(IE= 310 mA)
VBEF
-
Transition frequency(VCE= 6V, IC= 10mA, f= 30MHZ)
fT
150
CLASSIFICATION OF hFE(1)
RANK
Range
Marking
L
130~200
Note : "Fully ROHS compliant", "100% Sn plating (Pb-free)".
TYP
-
-
-
-
-
-
-
-
-
-
-
-
CR
MAX
-
-
-
0.1
0.1
0.1
400
-
0.3
1
1.4
-
H
200~400
UNITS
V
V
V
mA
mA
mA
-
-
V
V
V
MHZ
2007-3