C13003 Datasheet, PDF (1/4 Pages) Continental Device India Limited – NPN SILICON POWER TRANSISTOR

TO126 PLASTIC PACKAGE
NPN SILICON POWER TRANSISTOR
Suitable for Lighting, Switching Regulator and Motor Control
C13003
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter (sus) Voltage
Emitter Base Voltage
Collector Current Continuous
Peak (1)
Base Current Continuous
Peak (1)
Emitter Current Continuous
Peak (1)
Power Dissipation @ T_a=25 ºC
Derate Above 25ºC
Power Dissipation @ T_c=25 ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
I_BM
I_E
I_EM
P_D
P_D
T_j, T_stg
VALUE
600
400
9.0
1.5
3.0
0.75
1.5
2.25
4.5
1.4
11.2
40
320
- 65 to+150
UNIT
V
V
V
A
A
A
A
A
A
W
mW/ ºC
W
mW/ ºC
ºC
THERMAL RESISTANCE
Junction to Case
Junction to Ambient
Maximum Lead Temperature for Soldering
Purpose: 1/8" from Case for 5 Seconds
R_{th (j-c)}
R_{th (j-a)}
T_L
3.12
89
275
ºC/W
ºC/W
ºC
(1) Pulse Test: Pulse Width=5ms, Duty Cycle=10%
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Base Voltage
V_CBO
I_C=1mA, I_E=0
Collector Emitter (sus) Voltage
*V_CEO(sus)
I_C=10mA, I_B=0
Collector Cut Off Current
I_CBO
V_CB=600V_, I_E=0
Emitter Cut Off Current
V_CB=600V_, I_E=0, T_c=100ºC
I_EBO
V_EB=9V, I_C=0
*Pulse Test: PW=300ms, Duty Cycle=2%
MIN TYP MAX
600
400
1.0
5.0
1.0
UNIT
V
V
mA
mA
mA