BFS20 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN medium frequency transistor

RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
BFS20
FEATURES
* Power dissipation
PCM :
0.25
W (Tamb=25^OC)
* Collector current
ICM :
0.025
A
* Collector-base voltage
V(BR)CBO : 30
V
* Operating and storage junction temperature range
TJ,Tstg: -55^OC to +150^OC
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25^OC ambient temperature unless otherwise specified.
Single phase , half wave, 60HZ, resistive or inductive load.
For capacitive load, derate current by 20%.
ELECTRICAL CHARACTERISTICS ( @ TA = 25^OC unless otherwise noted )
CHARACTERISTICS
Collector-base breakdown voltage (IC= 100mA, IE=0)
Collector-emitter breakdown voltage (IC= 100mA, IB=0)
Emitter-base breakdown voltage (IE= 100mA, IC=0)
Collector cut-off current (VCB= 20V, IE=0)
Collector cut-off current (VCE= 15V, IC=0)
Collector cut-off current (VEB= 4V, IC=0)
DC current gain (VCE= 10V, IC= 7mA)
Collector-emitter saturation voltage (IC= 10mA, IB= 1mA)
Base - emitter voltage (IC= 7mA, VCE= 10V)
Transition frequency (VCE= 10V, IC= 5mA, f=100MHZ)
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(on)
fT
Marking
Note 1: "Fully ROHS compliant", "100% Sn plating (Pb-free)".
SOT-23
COLLECTOR
3
BASE ₁
2
EMITTER
0.006(0.15)
0.003(0.08)
0.055(1.40)
0.047(1.20)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
1
0.019(2.00)
0.071(1.80)
3
2
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
MIN
TYP
30
-
20
-
4
-
-
-
-
-
-
-
40
-
-
-
-
-
275
-
G11
MAX
-
-
-
0.1
0.1
0.1
120
0.3
0.9
-
UNITS
V
V
V
mA
mA
mA
-
V
V
MHz
2006-3