BF491 Datasheet, PDF (1/4 Pages) Micro Electronics – PNP SILICON HIGH VOLTAGE TRANSISTORS

PNP SILICON PLANAR EPITAXIAL
HIGH VOLTAGE VIDEO TRANSISTORS
High Voltage Video Amplifier
Darlington Transistor
* Power Dissipation: PD=625mW
BF491
THRU
BF493
.205(5.20)
.175(4.45)
.082(2.082)
.078(1.982)
321
.022(0.55)
.016(0.41)
TO-92
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ^oC ambient temperature unless otherwise specified.
Absolute Maximum Ratings T A=25 ^OC unless otherwise noted
DESCRIPTION
SYMBOL
Collector-Emitter Voltage
VCEO
Collector Base Voltage
VCBO
Emitter Base Voltage
VEBO
Collector Current Continuous
IC
Total Device Dissipation @ Ta=25ºC
Derate Above 25ºC
PD
Total Device Dissipation @ Tc=25ºC
Derate Above 25ºC
PD
Operating And Storage Junction
Temperature Range
Tj,TSTG
BF491
200
200
6
.058(1.40)
.045(1.14)
.055(1.40)
.045(1.14)
.165(4.19)
.125(3.18)
321
.020(0.50)
.014(0.35)
COLLECTOR
1
BASE ₂
3
EMITTER
Dimensions in inches and (millimeters)
BF492
250
250
8
500
625
1.2
1500
12
-55 to + 150
BF493
300
300
8
UNITS
Volts
Volts
Volts
mAmps
mW
mW/⁰C
mW
mW/⁰C
0_C
ELECTRICAL CHARACTERISTICS TA=25 ^OC unless otherwise noted
DESCRIPTION
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Test Condition
IC=0.1mA,IE=0
IC=1mA,IB=0
IE=100uA,IC=0
VCB=160V,IE=0
VCB=200V,IE=0
VEB=4.0V,IC=0
VEB=6.0V,IC=0
SYMBOL
BVCBO
BVCEO*
BVEBO
ICBO
IEBO
DC Current Gain
IC=1mA,VCE=10V
hFE
IC=10mA,VCE=10V
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC=20mA,IB=2mA
IC=20mA,IB=2mA
VCE(sat)
VBE(sat)
BF491
>200
>200
>6.0
<0.1
<0.1
>25
>40
<2
<2
BF492
>250
>250
>8.0
<0.1
<0.1
>25
>40
<2
<2
BF493
>300
>300
>8.0
UNITS
Volts
Volts
Volts
<0.1
uA
uA
<0.1
>25
>40
<2
Volts
<2
Volts
VD 2009-10
REV: O