BCW30 Datasheet, PDF (1/2 Pages) STMicroelectronics – SMALL SIGNAL PNP TRANSISTORS

BCW30
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
FEATURES
* Power dissipation
PCM :
0.225 W (Tamb=25^OC)
* Collector current
ICM :
-0.1 A
* Collector-base voltage
V(BR)CBO : -32 V
* Operating and storage junction temperature range
TJ,Tstg: -55^OC to +150^OC
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25^OC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
ELECTRICAL CHARACTERISTICS ( @ TA = 25^oC unless otherwise noted )
CHARACTERISTICS
SYMBOL
Collector-base breakdown voltage (IC= -10mA, IE=0)
Collector-emitter breakdown voltage (IC= -2mA, IB=0)
Emitter-base breakdown voltage (IE= -10mA, IC=0)
Collector cut-off current (VCB= -32V, IE=0)
Collector cut-off current (VCE= -30V, IB=0)
Collector cut-off current (VEB= -5V, IC=0)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
DC current gain (VCE= -5V, IC= -2mA)
Collector-emitter saturation voltage (IC= -10mA, IB= -0.5mA)
hFE
VCE(sat)
Base-emitter voltage (IC= -2mA, VCE= -5V)
VBE(on)
CLASSIFICATION OF hFE
RANK
Range
Marking
Note ; “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.
SOT-23
COLLECTOR
3
BASE ₁
2
EMITTER
0.006(0.15)
0.003(0.08)
0.055(1.40)
0.047(1.20)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
1
0.019(2.00)
0.071(1.80)
3
2
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
MIN
TYP
MAX
UNITS
-32
-
-
V
-32
-
-
V
-5
-
-
V
-
-
-0.1
mA
-
-
-0.1
mA
-
-
-0.1
mA
215
-
500
-
-
-
-0.3
V
-
-
-0.75
V
L
215-350
C2X
H
350-500
2007-3