BC848A Datasheet, PDF (1/2 Pages) Zowie Technology Corporation – GENERAL PURPOSE TRANSISTOR NPN SILICON

BC848A
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
FEATURES
* Power dissipation
PCM :
0.225
W (Tamb=25^OC) Note1
* Collector current
ICM :
0.1
A
* Collector-base voltage
VCBO :
30
V
* Operating and storage junction temperature range
TJ,Tstg: -55^OC to +150^OC
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25^OC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
ELECTRICAL CHARACTERISTICS ( @ TA = 25^oC unless otherwise noted )
CHARACTERISTICS
SYMBOL
Collector-base breakdown voltage (IC= 10mA, IE=0)
VCBO
Collector-emitter breakdown voltage (IC= 10mA, IB=0)
Emitter-base breakdown voltage (IE= 10mA, IC=0)
VCEO
VEBO
Collector cut-off current (VCB= 30V, IE=0)
ICBO
Collector cut-off current (VCE= 30V, IB=0)
Emitter cut-off current (VEB= 5V, IC=0)
ICEO
IEBO
DC current gain (VCE= 5V, IC= 2mA)
Collector-emitter saturation voltage (IC= 100mA, IB= 5mA)
hFE(1)
VCE(sat)
Base-emitter saturation voltage (IC= 100mA, IB= 5mA)
Transition frequency (VCE= 5V, IC= 10mA, f= 100MHZ)
VBE(sat)
fT
DEVICE MARKING
BC848A
Notes: 1. Transistor mounted on an FR4 Printed-circuit board.
2. “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.
SOT-23
COLLECTOR
3
BASE ₁
2
EMITTER
0.006(0.15)
0.003(0.08)
0.055(1.40)
0.047(1.20)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
1
0.019(2.00)
0.071(1.80)
3
2
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
MIN
30
30
6
-
-
-
110
-
-
100
1J
MAX
-
-
-
0.1
0.1
0.1
220
0.5
1.1
-
UNITS
V
V
V
mA
mA
mA
-
V
V
MHZ
2007-3