BC817 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN general purpose transistor

TECHNICAL SPECIFICATION
BC817
NPN Silicon Planar Epitaxial Transistor
Dimensions SOT-23
1 BASE
2 EMITTER
3 COLLECTOR
Absolute Maximun Ratings (Ta=25^oC unless specified otherwise)
Des ription
SYMBOL
Collector-Emitter Voltage (V_BE = 0V)
Collector Emitter Voltage (open base)
Emitter Base Voltage
I_C = 10mA
Collector Current (DC)
Collector Current - Peak
Emitter Current - Peak
Base Current - (DC)
Base Current - Peak
Total Power Dissipation up to T_amb = 25 °C
Storage Temperature
Junction Temperature
V_CES
V_CEO
V_EBO
I_C
I_CM
(-I_EM)
I_B
I_BM
P_tot
T_stg
T_J
Thermal Resistance
From junction to ambient
R_th(j-a)
VALUE
50
45
5
500
1000
1000
100
200
250
(-55 to +150)
150
500
UNITS
V
V
V
mA
mA
mA
mA
mA
mW
°^C
°^C
k/W