BC808 Datasheet, PDF (1/2 Pages) AUK corp – PNP Silicon Transistor (High current application Switching application)

RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
BC808
FEATURES
* Power dissipation
PCM :
200 mW (Tamb=25^OC)
* Collector current
ICM :
500 mA
* Collector-base voltage
V(BR)CBO : 30 V
* Operating and storage junction temperature range
TJ,Tstg: -55^OC to +150^OC
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25^OC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
SYMBOL
Collector-base breakdown voltage (IC= -100mA, IE=0)
Collector-emitter breakdown voltage (IC= -1mA, IB=0)
V(BR)CBO
V(BR)CEO
Emitter-base breakdown voltage (IE= -100mA, IC=0)
Collector cut-off current (VCB= -30V, IE=0)
Emitter cut-off current (VEB= -4V, IC=0)
V(BR)EBO
ICBO
IEBO
DC current gain (VCE= -1V, IC= -100mA)
DC current gain (VCE= -1V, IC= -500mA)
Collector-emitter saturation voltage (IC= -500mA, IB= -50mA)
hFE
VCE(sat)
Base - emitter voltage (VCE= -1V, IC= -500mA)
VBE
Transition frequency (VCE= -5V, IC= -10mA, f= 50MHZ)
fT
Collector output capacitance (VCB= -10V, IE= 0, f= 1MHZ)
Cob
CLASSIFICATION OF hFE(1)
RANK
Range
16
100-250
Marking
5E
SOT-23
COLLECTOR
3
BASE ₁
2
EMITTER
0.006(0.15)
0.003(0.08)
0.055(1.40)
0.047(1.20)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
1
0.019(2.00)
0.071(1.80)
3
2
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
MIN
TYP
-30
-
-25
-
-5
-
-
-
-
-
100
-
40
-
-
-
-
-
-
100
-
12
25
160-400
5F
MAX
-
-
-
-0.1
-0.1
600
-
-0.7
1.2
-
-
UNITS
V
V
V
mA
mA
-
-
V
V
MHz
pF
40
250-600
5G
2006-3