BAW56 Datasheet, PDF (1/1 Pages) NXP Semiconductors – High-speed double diode

RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
BAW56
SURFACE MOUNT, DUAL 1N4148 COMMON ANODE DIODE
Absolute Maximum Ratings (Ta=25_°C)
Items
Symbol Ratings Unit
Reverse Voltage VRRM
85
V
Reverse
trr
4
ns
Recovery Time
Forward Voltage VF
1.0
V
@ If = 50 mA
Forward Current IF
215
mA
Junction Temp. Tj
-55 to 150 _°C
Storage Temp. Tstg
-55 to 150 _°C
Mechanical Data
Items
Materials
Package
SOT-23
Lead Frame 42 Alloy
Lead Finish Solder Plating
Bond Wire
Au
Mold Resin Epoxy
Chip
Silicon
Electrical Characteristics per Diode (Ta=25_°C)
Ratings
Reverse Breakdown Voltage IR= 100uA
Repetitive Peak Reverse Voltage
Repetitive Peak Forward Current
Forward Voltage
IF= 1mA
IF= 10mA
IF= 50mA
IF= 150mA
Reverse Current
VR= 75V
VR= 25V (Tj= 150_°C)
VR= 75V (Tj= 150_°C)
Junction Capacitance VR = 0 V, f = 1MHz
Reverse Recovery Time IF= IR= 10mA; RL= 100 ohms
Thermal Resistance (junction to ambient)
Symbol
VBR
VRRM
IFRM
VF
IR
Cj
trr
R_ΘJA
SOT-23
(1)
(3)
(2)
Ratings
75
85
450
715
855
1000
1250
1.0
30
50
2.0
4
500
1. CATHODE
2. CATHODE
3. ANODE
(UNITS: mm)
Unit
V
V
mA
mV
uA
pF
ns
°^C/W
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