BAV99W Datasheet, PDF (1/3 Pages) NXP Semiconductors – High-speed double diode

SOT-323 SWITCHING DIODE
BAV99W
FEATURES
* Power dissipation
PD: 200 mW (Tamb=25^OC)
* Forward current
IF: 150 mA
* Reverse voltage
VR: 75 V
* Operating and storage junction temperature range
TJ,Tstg: -65^OC to +150^OC
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.006 gram
* Marking: KJG
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ^oC ambient temperature unless otherwise specified.
3
1
2
MAXIMUM RATINGS ( @ TA = 25^oC unless otherwise noted )
PARAMETER
Reverse Voltage
SYMBOL
VR
Forward current
IO
Forward power dissipation
PD
Junction Temperature
TJ
Storage Temperature
TSTG
ELECTRICAL CHARACTERISTICS ( @ TA = 25^oC unless otherwise noted )
CHARACTERISTICS
SYMBOL
Reverse Breakdown Voltage (IR=100uA)
V(BR)
Reverse voltage leakage current (VR=75V)
IR
(VR=20V)
(IF=1mA)
Forward voltage
(IF=10mA)
(IF=50mA)
VF
(IF=150mA)
Diode capacitance (VR=0V,f=1MHz)
CD
Reverse recovery time (IF=IR=10mA, IRR=0.1XIRR , RL=100W)
trr
Note : "Fully RoHS Compliant", "100% Sn plating (Pb-free)".
SOT-323
0.006(0.15)
0.003(0.08)
0.053(1.35)
0.045(1.15)
0.043(1.10)
0.035(0.90)
REF 0.021(0.53)
0.004(0.10)
0.000(0.00)
0.016(0.40)
0.008(0.20)
0.055(1.40)
0.047(1.20)
0.096(2.45)
0.085(2.15)
1
3
2
0.087(2.20)
0.079(2.00)
Dimensions in inches and (millimeters)
MIN.
75
-
-
-
-
LIMITS
75
150
200
150
-65 to +150
TYP.
-
-
-
-
-
UNITS
V
mA
mW
O_C
O_C
MAX.
-
2.5
25
715
855
1000
1250
2
4
UNITS
V
uA
nA
mV
pF
ns
VC 2007-08