BAV70W Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed double diode

RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-323 PLASTIC ENCAPSULATE
SWITCHING DIODE
BAV70W
FEATURES
* Power dissipation
PD:
200
mW (Tamb=25^OC)
* ^{Collector current}
IO:
150
mA (Tamb=25^OC)
* ^{Collector - base voltage}
VR:
75
V
* ^{Operating and storage junction temperature range}
TJ,Tstg: -55^OC to+150^OC
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.006 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ^oC ambient temperature unless otherwise specified.
SOT-323
0.006(0.15)
0.003(0.08)
0.053(1.35)
0.045(1.15)
0.043(1.10)
0.035(0.90)
REF 0.021(0.53)
0.004(0.10)
0.000(0.00)
0.016(0.40)
0.008(0.20)
0.055(1.40)
0.047(1.20)
0.096(2.45)
0.085(2.15)
0.087(2.20)
0.079(2.00)
ELECTRICAL CHARACTERISTICS ( @ TA = 25^oC unless otherwise noted )
CHARACTERISTICS
Reveres breakdown voltage (IR= 100mA)
Reveres voltage leakage current (VR= 75V)
SYMBOL
V(BR)
IR
(IF= 1mA)
(IF= 10mA)
Forward voltage
VF
(IF= 50mA)
(IF= 150mA)
Diode capacitance(VR= 0V, f= 1MHz)
CD
Reveres recovery time (IF= IR= 10mA, Irr= 0.1 x IR, RL= 100W)
trr
Dimensions in inches and (millimeters)
MIN
TYP
MAX
UNITS
75
-
-
V
-
-
2.5
mA
-
-
715
-
-
855
-
-
1000
mV
-
-
1250
-
-
2
P^F
-
-
4
nS
2006-3