BAV21W Datasheet, PDF (1/3 Pages) Taiwan Semiconductor Company, Ltd – 410 mW High Voltage SMD Switching Diode

RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
BAV21W
SMALL SIGNAL DIODE
VOLTAGE RANGE 200 Volts CURRENT 200 mAmpere
FEATURES
* Fast Switching Speed
* Surface Mount Package ldeally Suited for
Automatic Insertion
* General Purpose Switching Applications
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.01 gram
SOD-123
.110(2.80)
.102(2.60)
.152(3.85)
.140(3.55)
.067(1.70)
.059(1.50)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS (@ TA=25 ^OC unless otherwise noted)
RATINGS
Non-Repetitive Peak Reverse Voltage
Maximum Repetitive Peak Reverse Voltage
Maximum Working Peak reverse Voltage
Maximum DC Blocking Voltage
Maximum RMS Voltage
Maximum Forward Comtinuous Current
Maximum Average Forward Rectified Current
Non-Repetitive Peak Forward Surge Current
@t=1.0mS
@t=1.0S
Typical Reverse Recovery Time(IF=IR=30mA,Irr=0.1XIR,RL=100Ω)
Typical Junction Capacitance(VR=0V,f=1MHz)
Maximum Power Dissipation
Typical Thermal Resistance
Operating and Storage Temperature Range
SYMBOL
VRM
VVRRWRMM
VR
VRMS
I_FM
IO
IFSM
Trr
CT
PD
RΘJA
TJ,TSTG
ELECTRICAL CHARACTERISTICS (@TA=25 ^OC unless otherwise noted)
CHARACTERISTICS
SYMBOL
Maximum Instantaneous Forward Voltage
@IF=0.1A
@IF=0.2A
V_F
Maximum Instantaneous Reverse Current
@V_R=200V
I_R
REF .020(0.50)
.049(1.25)
.041(1.05)
.004(.10)
.000(.00)
Dimensions in inches and (millimeters)
BAV21W
250
200
141
400
200
2.5
0.5
50
5
250
500
-65 to + 150
BAV21W
1.0
1.25
0.1
UNITS
Volts
Volts
Volts
mAmps
mAmps
Amps
nS
pF
mW
O_C/W
O_C
UNITS
Volts
uAmps
2006-3