BAT54C Datasheet, PDF (1/1 Pages) Rectron Semiconductor – DUAL SURFACE MOUNT SCHOTTKY

RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
BAT54C
DUAL SURFACE MOUNT SCHOTTKY
Absolute Maximun Ratings per Diode (Ta=25^oC)
Items
Symbol Ratings Unit
Reverse Voltage
VR
30
V
Power Dissipation * P_TOT
Forward Voltage
@ If = 100mA
VF
300
mW
1.0
V
Forward Current
IF
200
mA
Junction Temp.
Storage Temp.
T_J
-55 to 125 ^oC
T_STG
-55 to 150
o_C
Mechanical Data
Items
Materials
Package
SOT-23
Lead Frame
42 Alloy
Lead Finish
Solder Plating
Bond Wire
Au
Mold Resin
Epoxy
Chip
Silicon
Dimensions
SOSTOSTO-T23-23
Electrical Characteristics per diode (Ta=25^oC)
Ratings
Symbol
Ratings
Unit
Minimum Repetitive Peak Reverse Voltage
VRRM
30
V
Maximum Repetitive Peak Forward Current
IFRM
300
mA
Maximum Forward Voltage
IF= 100uA
IF= 1mA
IF= 10mA
IF= 30mA
IF= 100mA
Maximum Reverse Current
VR= 25V
Maximum Junction Capacitance
VR= 1V, f= 1MHz
Maximum Reverse Recovery Time
IF= 10mA, IR= 10mA, IRR= 1mA, RL= 100W
Thermal Resistance*
240
320
VF
400
mV
500
1000
IR
2.0
uA
Cj
15
pF
trr
5
ns
Rθjc
430
o_C/W
* (Mounted on a 10x8x0.6mm ceramic substrate)
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