BAT42 Datasheet, PDF (1/2 Pages) STMicroelectronics – SMALL SIGNAL SCHOTTKY DIODES

BAT42
SILICON PLANAR SCHOTTKY DIODES
FEATURES
* Fast Switching Device(TRR<4.0nS)
* ^{DO-35 Package (JEDEC)}
* ^{Through-Hole Device Type Mounting}
* Hermetically Sealed Glass
* Compression Bonded Construction
* ^{All external surfaces are corrosion resistant and leads}
are readily solderable
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGES ( @ TA = 25^oC unless otherwise noted )
RATINGS
SYMBOL
Maximum Forward Comtinuous Reverse Voltage
VR
Maximum Forward Comtinuous Current @ TA=25^OC
IF
Maximum Peak Forward Current @tp<1s,d<0.5
IFRM
Surge Forward Current @ tp<10ms
IFSM
Maximum Power Dissipation @ TA=65^OC
PD
Junction Temperature
TJ
Storage Temperature Range
TSTG
ELECTRICAL CHARACTERISTICS ( @ TA = 25^oC unless otherwise noted )
CHARACTERISTICS
SYMBOL
Reverse breakdown voltage (IR=100mA)
Reverse voltage leakage current (VR=25V,TJ=25^OC)
(VR=25V,TJ=100^OC)
(IF=10mA)
Forward voltage Pulse Tesx tp<300ms,d<2% (IF=50mA)
(IF=200mA)
Diode capacitance (VR=1,f=1MHz)
Reveres recovery time (IF=IR=10mA,IRR=1mA,RL=100W)
V(BR)R
IR
VF
CD
trr
DO-35
1.02 (26.0)
MIN.
.022 (0.56)
.018 (0.46)
DIA.
.165 (4.2)
MAX.
1.02 (26.0)
MIN.
.079 (2.0)
DIA.
MAX.
Dimensions in inches and (millimeters)
MIN.
30
-
-
-
-
BAT42
30
200
500
4
200
125
-65 to + 150
TYP.
-
-
-
-
-
-
7.0
-
MAX.
-
0.5
100
0.40
0.65
1.0
-
5
UNITS
V
mAmps
mAmps
Amps
mW
O_C
O_C
UNITS
V
mA
V
pF
nS
2006-3