BAS86 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Schottky barrier diode

RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SCHOTTKY DIODES
BAS86
FEATURES
* Fast Switching Device(TRR<4.0nS)
* ^{Mini MELF Glass Case (SOD-80)}
* ^{Through-Hole Device Type Mounting}
* Hermetically Sealed Glass
* Compression Bonded Construction
* ^{All external surfaces are corrosion resistant and leads}
are readily solderable
SOD-80
.016(0.40)
.008(0.20)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGES ( @ TA = 25^oC unless otherwise noted )
RATINGS
SYMBOL
Maximum Forward Comtinuous Reverse Voltage
VR
Maximum Forward Comtinuous Current @ TA=25^OC
IF
Maximum Peak Forward Current tp<1s
IFM
Surge Forward Current @ tp=10ms
IFSM
Maximum Power Dissipation @ TA=65^OC
PD
Junction Temperature
Storage Temperature Range
TJ
TSTG
ELECTRICAL CHARACTERISTICS ( @ TA = 25^oC unless otherwise noted )
CHARACTERISTICS
SYMBOL
Reverse voltage leakage current (VR=40V)
IR
(IF=0.1mA)
(IF=1mA)
Forward voltage Pulse Tesx tp<300µs,δ<2% (IF=10mA)
VF
(IF=30mA)
(IF=100mA)
Diode capacitance (VR=1,f=1MHz)
CD
.142(3.6)
.134(3.4)
Dimensions in inches and (millimeters)
MIN.
-
-
-
BAS86
50
200
500
5
200
125
-65 to + 150
TYP.
-
-
-
-
-
-
-
MAX.
5
0.30
0.38
0.45
0.60
0.90
8
UNITS
V
mAmps
mAmps
Amps
mW
O_C
O_C
UNITS
µA
V
pF
2006-3