BAS85 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Schottky barrier diode

RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SCHOTTKY DIODES
BAS85
FEATURES
* Fast Switching Device(TRR<4.0nS)
* ^{Mini MELF Glass Case (SOD-80)}
* ^{Through-Hole Device Type Mounting}
* Hermetically Sealed Glass
* Compression Bonded Construction
* ^{All external surfaces are corrosion resistant and leads}
are readily solderable
SOD-80
.016(0.40)
.008(0.20)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGES ( @ TA = 25^oC unless otherwise noted )
RATINGS
SYMBOL
Maximum Forward Comtinuous Reverse Voltage
VR
Maximum Forward Comtinuous Current @ TA=25^OC
IF
Maximum Peak Forward Current @ TA=25^OC
IFM
Surge Forward Current @ tp<1s,TA=25^OC
IFSM
Maximum Power Dissipation @ TA=65^OC
PD
Junction Temperature
Storage Temperature Range
TJ
TSTG
ELECTRICAL CHARACTERISTICS ( @ TA = 25^oC unless otherwise noted )
CHARACTERISTICS
SYMBOL
Reverse breakdown voltage (IR=10µA)
V(BR)R
Reverse voltage leakage current (VR=25V)
IR
(IF=0.1mA)
(IF=1mA)
Forward voltage Pulse Tesx tp<300µs,δ<2% (IF=10mA)
VF
(IF=30mA)
(IF=100mA)
Diode capacitance (VR=1,f=1MHz)
CD
Reveres recovery time (IF=IR=10mA,IR=1mA)
trr
.142(3.6)
.134(3.4)
Dimensions in inches and (millimeters)
MIN.
30
-
-
-
-
BAS85
30
200
300
600
200
125
-65 to + 150
TYP.
-
-
-
-
-
0.5
-
-
-
MAX.
-
2
0.24
0.32
0.4
-
0.8
10
5
UNITS
V
mAmps
mAmps
mAmps
mW
O_C
O_C
UNITS
V
µA
V
pF
nS
2006-3