2SD596 Datasheet, PDF (1/2 Pages) NEC – AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
2SD596
FEATURES
* Power dissipation
PCM :
0.2
W (Tamb=25^OC)
* Collector current
ICM :
0.7
A
* Collector-base voltage
V(BR)CBO : 30
V
* Operating and storage junction temperature range
TJ,Tstg: -55^OC to +150^OC
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25^OC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
SYMBOL
Collector-base breakdown voltage (IC= 100mA, IE=0)
V(BR)CBO
Collector-emitter breakdown voltage (IC= 1mA, IB=0)
V(BR)CEO
Emitter-base breakdown voltage (IE= 100mA, IC=0)
Collector cut-off current (VCB= 30V, IE=0)
V(BR)EBO
ICBO
Emitter cut-off current (VEB= 5V, IC=0)
IEBO
DC current gain (VCE= 1V, IC= 100mA)
DC current gain (VCE= 1V, IC= 700mA)
Collector-emitter saturation voltage (IC= 700mA, IB= 70mA)
hFE(1) ^*
hFE(2) ^*
VCE(sat)*
Base-emitter voltage (VCE= 6V, IC= 10mA)
VBE(on) *
Transition frequency (VCE= 6V, IC= 10mA)
fT
* _{Pulse teat: Pulse width <350ms, Duty Cycle <2%.}
CLASSIFICATION OF hFE
RANK
Range
DV1
110-180
SOT-23
COLLECTOR
3
BASE ₁
2
EMITTER
0.006(0.15)
0.003(0.08)
0.055(1.40)
0.047(1.20)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
1
0.019(2.00)
0.071(1.80)
3
2
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
MIN
TYP
30
-
25
-
5
-
-
-
-
-
110
-
50
-
-
-
0.6
-
140
-
MAX
-
-
-
0.1
0.1
400
-
0.6
0.7
-
UNITS
V
V
V
mA
mA
-
-
V
V
MHz
DV2
135-220
DV3
170-270
DV4
200-320
DV5
250-400
2006-3