2SC5344 Datasheet, PDF (1/2 Pages) AUK corp – NPN Silicon Transistor (Audio power amplifier application)

RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
2SC5344
FEATURES
* Power dissipation
PCM :
0.2 W (Tamb=25^OC)
* Collector current
ICM :
0.8 A
* Collector-base voltage
V(BR)CBO : 35 V
* Operating and storage junction temperature range
TJ,Tstg: -55^OC to +150^OC
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25^OC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
ELECTRICAL CHARACTERISTICS ( @ TA = 25^oC unless otherwise noted )
CHARACTERISTICS
SYMBOL
Collector-base breakdown voltage (IC= 100mA, IE=0)
V(BR)CBO
Collector-emitter breakdown voltage (IC= 10mA, IB=0)
V(BR)CEO
Emitter-base breakdown voltage(IE=10mA, Ic=0)
V(BR)EBO
Collector cut-off current (VCB= 35V, IE=0)
ICBO
Emitter cut-off current (VEB= 5V, IC=0)
DC current gain (VCE= 1V, IC= 100mA)
Collector-emitter saturation voltage (IC= 500mA, IB= 50mA)
IEBO
hFE(1)
VCE(sat)
Transition frequency (VCE= 5V, IC= 10mA)
fT
Collector output capacitance (VCB= 10V, IE=0, f= 1MHZ)
Cob
CLASSIFICATION OF hFE(1)
RANK
Range
Marking
SOT-23
COLLECTOR
3
BASE ₁
2
EMITTER
0.006(0.15)
0.003(0.08)
0.055(1.40)
0.047(1.20)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
1
0.019(2.00)
0.071(1.80)
3
2
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
MIN
35
30
5
-
-
100
-
-
-
Q
100-200
FAO
TYP
MAX
UNITS
-
-
V
-
-
V
-
-
V
-
0.1
mA
-
0.1
mA
-
320
-
-
0.5
V
120
-
MHz
13
-
pF
Y
160-320
FAY
2006-3