2SC3052 Datasheet, PDF (1/2 Pages) Isahaya Electronics Corporation – LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
2SC3052
FEATURES
* Power dissipation
PCM :
0.15
W (Tamb=25^OC)
* Collector current
ICM :
0.2
A
* Collector-base voltage
V(BR)CBO : 50
V
* Operating and storage junction temperature range
TJ,Tstg: -55^OC to +150^OC
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25^OC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
SYMBOL
Collector-base breakdown voltage (IC= 100mA, IE=0)
Collector-emitter breakdown voltage (IC= 100mA, IB=0)
V(BR)CBO
V(BR)CEO
Emitter-base breakdown voltage (IE= 100mA, IC=0)
V(BR)EBO
Collector cut-off current (VCB= 50V, IE=0)
ICBO
Emitter cut-off current (VEB= 6V, IC=0)
IEBO
DC current gain (VCE= 6V, IC= 1mA)
DC current gain (VCE= 6V, IB= 0.1mA)
Collector-emitter saturation voltage (IC= 100mA, IB= 10mA)
Base - emitter saturation voltage (IC= 100mA, IB= 10mA)
hFE
VCE(sat)
VBE(sat)
Transition frequency (VCE= 6V, IC= 10mA)
fT
Collector output capacitance (VCE= 6V, IE= 0, f= 1MHZ)
Cob
Noise figure (VCE= 6V, IE= -0.1mA, f= 1KHZ, Rg=2KW)
NF
CLASSIFICATION OF hFE(1)
RANK
Range
E
150-300
Marking
LE
SOT-23
COLLECTOR
3
BASE ₁
2
EMITTER
0.006(0.15)
0.003(0.08)
0.055(1.40)
0.047(1.20)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
1
0.019(2.00)
0.071(1.80)
3
2
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
MIN
50
50
6
-
-
150
50
-
-
180
-
-
F
250-500
LF
MAX
-
-
-
0.1
0.1
800
-
0.3
1
-
4
15
UNITS
V
V
V
mA
mA
-
-
V
V
MHz
pF
dB
G
400-800
LG
2006-3