2SC2712 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLFIER APPLICATIONS)

RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
2SC2712
FEATURES
* Power dissipation
PCM :
150
mW(Tamb=25^OC)
* Collector current
ICM :
150
mA
* Collector-base voltage
V(BR)CBO : 60
V
* Operating and storage junction temperature range
TJ,Tstg: -55^OC to +150^OC
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25^OC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
Collector-base breakdown voltage (IC= 100mA, IE=0)
Collector-emitter breakdown voltage (IC= 1mA, IB=0)
Emitter-base breakdown voltage (IE= 100mA, IC=0)
Collector cut-off current (VCB= 60V, IE=0)
Emitter cut-off current (VEB= 5V, IC=0)
DC current gain (VCE= 6V, IC= 2mA)
Collector-emitter saturation voltage (IC= 100mA, IB= 10mA)
Transition frequency (VCE= 10V, IC= 1mA)
Output capacitance (VCB= 10V, IE= 0, f= 1MHZ)
Noise figure (VCE= 6V, IC= 0.1mA, f= 1KHZ, Rg= 10KW)
CLASSIFICATION OF hFE
RANK
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
NF
O
Range
70-140
Marking
LO
SOT-23
COLLECTOR
3
BASE ₁
2
EMITTER
0.006(0.15)
0.003(0.08)
0.055(1.40)
0.047(1.20)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
1
0.019(2.00)
0.071(1.80)
3
2
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
MIN
60
50
5
-
-
70
-
80
-
-
Y
120-240
LY
TYP
-
-
-
-
-
-
0.1
-
2.0
1.0
GR
200-400
LG
MAX
-
-
-
0.1
0.1
700
0.25
-
3.5
10
UNITS
V
V
V
mA
mA
-
V
MHz
pF
dB
BL
350-700
LL
2006-3