2SC2412 Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor

RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
2SC2412
FEATURES
* Power dissipation
PCM :
0.2
W(Tamb=25^OC)
* Collector current
ICM :
0.15
A
* Collector-base voltage
V(BR)CBO : 60
V
* Operating and storage junction temperature range
TJ,Tstg: -55^OCto+150^OC
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25^OC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SOT-23
COLLECTOR
3
BASE ₁
2
EMITTER
0.006(0.15)
0.003(0.08)
0.055(1.40)
0.047(1.20)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
1
0.019(2.00)
0.071(1.80)
3
2
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS ( @ TA = 25^oC unless otherwise noted )
CHARACTERISTICS
Collector-base breakdown voltage (IC= 50mA, IE=0)
Collector-emitter breakdown voltage (IC= 1mA, IB=0)
Emitter-base breakdown voltage (IE= 50mA, IC=0)
Collector cut-off current (VCB= 60V, IE=0)
Emitter cut-off current (VEB= 7V, IC=0)
DC current gain (VCE= 6V, IC= 1mA)
Collector-emitter saturation voltage (IC= 50mA, IB= 5mA)
Transition frequency (VCE= 12V, IC= 2mA, f= 100MHZ)
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
fT
CLASSIFICATION OF hFE(1)
RANK
Range
Marking
Q
120-270
BQ
MIN.
60
50
7
-
-
120
-
150
TYP.
-
-
-
-
-
-
-
-
R
180-390
BR
MAX.
-
-
-
0.1
0.1
560
0.4
-
UNITS
V
V
V
mA
mA
-
V
MHz
Y
270-560
BS
2006-3