2SB709A Datasheet, PDF (1/5 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type

RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
FEATURES
* Power dissipation
PCM :
0.2
W(Tamb=25^OC)
2SB709A
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25^OC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load ,derate current by 20%.
MAXIMUM RATINGS ( @ TA = 25^oC unless otherwise noted )
CHARACTERISTICS
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current-continuous
SYMBOL
VCBO
VCEO
VEBO
IC
Junction and Storage temperature
TJ,Tstg
ELECTRICAL CHARACTERISTICS ( @ TA = 25^oC unless otherwise noted )
CHARACTERISTICS
Collector-base breakdown voltage (IC= -10mA, IE=0)
Collector-emitter breakdown voltage (IC= -2mA, IB=0)
Emitter-base breakdown voltage (IE= -10mA, IC=0)
Collector cut-off current (VCB= -20V, IE=0)
Emitter cut-off current (VCE= -10V, IB=0)
DC current gain (VCE= -10V, IC= -2mA)
Collector-emitter saturation voltage (IC= -100mA, IB= -10mA)
Transition frequency (VCE= -10V, IC= -1mA, f= 200MHZ)
Collector output capacitance (VCB= -10V, IE= 0, f= 1MHz)
CLASSIFICATION OF hFE
RANK
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
hFE
VCE(sat)
fT
Cob
Q
Range
160-260
Marking
BQ1
SOT-23
COLLECTOR
3
BASE ₁
2
EMITTER
0.006(0.15)
0.003(0.08)
0.055(1.40)
0.047(1.20)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
1
0.019(2.00)
0.071(1.80)
3
2
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
VALUE
-45
-45
-7
-200
-55-150
MIN
-45
-45
-7
-
-
160
-
60
-
R
210-340
BR1
UNITS
V
V
V
mA
O_C
MAX
-
-
-
-0.1
-100
460
-0.5
-
2.7
UNITS
V
V
V
mA
mA
-
V
MHz
PF
S
290-460
BS1
2006-3