2SA812 Datasheet, PDF (1/2 Pages) NEC – AUDIO FREQUENCY,GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD

RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
2SA812
FEATURES
* Power dissipation
PCM :
0.2
W(Tamb=25^OC)
* Collector current
ICM :
-0.1
A
* Collector-base voltage
V(BR)CBO : -60
V
* Operating and storage junction temperature range
TJ,Tstg: -55^OC to +150^OC
MECHANICAL DATA
* ^{Case: Molded plastic}
* ^{Epoxy: UL 94V-O rate flame retardant}
* ^{Lead: MIL-STD-202E method 208C guaranteed}
* ^{Mounting position: Any}
Weight: 0.008 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
ELECTRICAL CHARACTERISTICS ( @ TA = 25^oC unless otherwise noted )
CHARACTERISTICS
Collector - Base Breakdown Voltage(IC= -100 mA, IE=0)
SYMBOL
V(BR)CBO
Collector - Emitter Breakdown Voltage(IC= -1mA, IB=0)
V(BR)CEO
Emitter - Base Breakdown Voltage(IE= -100 mA, IC=0)
V(BR)EBO
Collector Cut - Off Current (VCB= -60V, IE=0)
ICBO
Emitter Cut - Off Current(VEB= -5V, IC=0)
IEBO
DC Current Gain(VCE= -6V, IC= -1mA)
Collector - Emitter Saturation Voltage(IC=-100 mA, IB= -10mA)
hFE
VCE(sat)
Base - Emitter Voltage(IC=-1mA, VCE= -6mA)
VBE
Tiansition Frequency(VCE= -6V, IC= -10mA)
fT
CLASSIFICATION OF hFE
Marking
Range
M4
90-180
M5
135-270
SOT-23
COLLECTOR
3
1
BASE
2
EMITTER
0.006(0.15)
0.003(0.08)
0.055(1.40)
0.047(1.20)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
0.019(2.00) ¹
0.071(1.80)
3
2
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
MIN
TYP
MAX
UNITS
-60
-
-
V
-50
-
-
V
-5
-
-
V
-
-
-0.1
mA
-
-
-0.1
mA
90
-
600
-
-
-
-0.3
V
-
-
-0.68
V
180
-
-
MHZ
M6
200-400
M7
300-600
2006-3