2SA1235A Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – PNP TRANSISTOR

RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
2SA1235A
FEATURES
* Power dissipation
PCM :
0.2
W(Tamb=25^OC)
* Collector current
ICM :
-0.2
A
* Collector-base voltage
V(BR)CBO : -60
V
* Operating and storage junction temperature range
TJ,Tstg: -55^OC to +150^OC
MECHANICAL DATA
* ^{Case: Molded plastic}
* ^{Epoxy: UL 94V-O rate flame retardant}
* ^{Lead: MIL-STD-202E method 208C guaranteed}
* ^{Mounting position: Any}
Weight: 0.008 gram
SOT-23
COLLECTOR
3
1
BASE
2
EMITTER
0.006(0.15)
0.003(0.08)
0.055(1.40)
0.047(1.20)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
ELECTRICAL CHARACTERISTICS ( @ TA = 25^oC unless otherwise noted )
CHARACTERISTICS
SYMBOL
Collector-Base Breakdown Voltage (IC= -100 mA, IE=0)
V(BR)CBO
Collector-Emitter Breakdown Voltage (IC= -100 mA, IB=0)
V(BR)CEO
Emitter-Base Breakdown Voltage (IE= -100 mA, IC=0)
V(BR)EBO
Collector Cut-Off Current (VCB= -60V, IE=0)
ICBO
Emitter Cut-Off Current (VEB= -6V, IC=0)
IEBO
DC Current Gain(VCB= -6V, IC= -1mA)
hFE
DC Current Gain(VCE= -6V, IC= -0.1mA)
Collector-Emitter Saturation Voltage(IC=-100 mA, IB= -10mA)
Base-Emitter Saturation Voltage(IC=-100 mA, IB= -10mA)
Tiansition Frequency(VCE= -6V, IC= -10mA)
Collector Output Capacitance(VCE= -6V, IE=0, f=1MHZ)
VCE(sat)
VBE(sat)
fT
Cob
Noise Figure(VCE= -6V, IE= 0.3mA, f=100HZ, RG=10KW)
CLASSIFICATION OF hFE(1)
RANK
Range
Marking
NF
E
150~300
M^. E
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
0.019(2.00) ¹
0.071(1.80)
3
2
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
MIN
MAX
UNITS
-60
-
V
-50
-
V
-6
-
V
-
-0.1
mA
-
-0.1
mA
150
500
-
90
-
-
-
-0.3
V
-
-1
V
180
-
MHZ
-
5
dB
-
20
dB
F
250~500
M^. E
2006-3