1SS357 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)

1SS357
SCHOTTKY DIODE
FEATURES
* Small Package
* Low VF ,low IR
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.004 grams
SOD-323
.071(1.80)
.063(1.60)
.106(2.70)
.098(2.50)
.055(1.40)
.047(1.20)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25^OC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS (@TA=25^OC unless otherwise noted)
RATINGS
Non-Repetitive Peak Reverse Voltage
SYMBOL
VRM
Maximum DC Reverse Voltage
VR
Maximum Average Forward Rectified Current
IO
Non-Repetitive Peak Forward Surge Current
IFSM
Operating and Storage Temperature Range
TJ,TSTG
ELECTRICAL CHARACTERISTICS ( @ TA = 25^oC unless otherwise noted )
CHARACTERISTICS
SYMBOL
Reverse voltage leakage current (VR=40V)
IR
(IF=1mA)
Forward voltage Pulse Tesx tp<300us,d<2% (IF=10mA)
VF
(IF=100mA)
Capacitance between terminals (VR=0,f=1MHz)
CT
REF .019(0.46)
MAX.039(1.00)
.004(.10)
.000(.00)
Dimensions in inches and (millimeters)
1SS357
45
40
0.1
1
-55~+125
UNITS
Volts
Volts
Amps
Amps
O_C
MIN.
-
-
-
TYP.
-
0.28
0.36
-
-
MAX.
5.0
-
-
0.6
25
UNITS
uA
V
pF
2006-3