1N914B Datasheet, PDF (1/1 Pages) Rectron Semiconductor – SIGNAL DIODE

RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
1N914B
1N914B SIGNAL DIODE
Absolute Maximum Ratings (Ta=25_°C)
Items
Symbol Ratings Unit
Reverse Voltage
VR
75
V
Reverse Recovery trr
4
ns
Time
Power Dissipation
P
500 mW
3.33mW/_°C (25_°C)
Forward Current
IF
300 mA
Junction Temp.
Storage Temp.
Tj -65 to 175 _°C
Tstg -65 to 175 _°C
Mechanical Data
Items
Materials
Package
DO-35
Case
Hermetically sealed glass
Lead/Finish Double stud/Solder Plating
Chip
Glass Passivated
Dimensions (DO-35)
DO-35
26 MIN
0.457
0.559
DIA.
4.2
max.
26 MIN
2.0
max.
DIA.
Dimensions in millimeters
Electrical Characteristics (Ta=25_°C)
Ratings
Minimum Breakdown Voltage
IR= 5.0uA
IR= 100uA
Peak Forward Surge Current PW= 1sec.
Maximum Forward Voltage
IF= 100mA
Maximum Reverse Current
VR= 20V
VR= 75V
VR= 20V, Tj= 150_°C
Maximum Junction Capacitance
VR= 0, f= 1 MHz
Maximum Reverse Recovery Time
IF= 10mA, VR= 6V, IRR= 1mA, RL= 100_Ω
Symbol
Ratings
Unit
BV
V
75
100
IFsurge
0.5
A
VF
V
1.0
IR
uA
0.025
5.0
50
Cj
pF
4
trr
ns
4
RECTRON USA
1315 John Reed Court, Industry, CA 91745
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