1N4150 Datasheet, PDF (1/1 Pages) NXP Semiconductors – High-speed diodes"

RECTRON
S E M IC O N D U C T O R
TECHNICAL SPECIFICATION
1N4150
1N4150 SIGNAL DIODE
Absolute Maximum Ratings (Ta=25°C)
Items
Symbol Ratings Unit
Reverse Voltage
VR
50
V
Reverse Recovery trr
4
ns
T im e
Power Dissipation
P
500
mW
3.33mW /°C (25°C)
Forward Current
IF
200
mA
Junction Temp.
Tj -65 to 200 °C
Storage Temp.
Tstg -65 to 200 °C
Dimensions (DO-35)
DO-35
26 MIN
4.2
max.
Mechanical Data
Item s
Materials
Package
DO-35
Case
Hermetically sealed glass
Lead/Finish Double stud/Solder Plating
Chip
Glass Passivated
26 MIN
0.457
0.559
DIA.
2.0
max.
DIA.
Dimensions in millimeters
Electrical Characteristics (Ta=25°C)
Ratings
Breakdown Voltage
IR= 5.0uA
Peak Forward Surge Current PW = 1sec.
Maximum Forward Voltage
IF= 200mA
Maximum Reverse Current
VR= 50V
VR= 20V, Tj= 150°C
Maximum Junction Capacitance
VR= 0, f= 1 MHz
Max Reverse Recovery Time
IF= -IR= 10-200mA, to 0.1 IF
Symbol
Ratings
Unit
BV
V
50
IFsurge
1.0
A
VF
V
1.0
IR
uA
0.10
100
Cj
pF
2.5
trr
ns
4
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