1N4007-B Datasheet, PDF (1/3 Pages) Rectron Semiconductor – SILICON RECTIFIER

RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SILICON RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
1N4001
THRU
1N4007
FEATURES
* Low cost
* Low leakage
* Low forward voltage drop
* High current capability
DO-41
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: Device has UL flammability classification 94V-O
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.33 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
1.0 (25.4)
MIN.
.034 (0.9)
DIA.
.028 (0.7)
.205 (5.2)
.166 (4.2)
1.0 (25.4)
MIN.
.107 (2.7)
DIA.
.080 (2.0)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At TA = 25^oC unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at TA = 75^oC
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note)
Typical Thermal Resistance
Operating and Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
IO
1N4001
50
35
50
1N4002
100
70
100
1N4003
200
140
200
1N4004
400
280
400
1N4005
600
420
600
1N4006
800
560
800
1N4007
1000
700
1000
UNITS
Volts
Volts
Volts
1.0
Amps
IFSM
CJ
RθJA
TJ, TSTG
30
15
50
-55 to + 150
Amps
pF
0_{C/ W}
0_C
ELECTRICAL CHARACTERISTICS (At TA = 25^oC unless otherwise noted)
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 1.0A DC
Maximum DC Reverse Current
@TA = 25^oC
at Rated DC Blocking Voltage
@TA = 100^oC
Maximum Full Load Reverse Current Average, Full Cycle
.375” (9.5mm) lead length at TL = 75^oC
NOTES : Measured at 1 MHZ and applied reverse voltage of 4.0 volts
SYMBOL
VF
IR
1N4001
1N4002
1N4003
1N4004
1.1
5.0
50
1N4005
1N4006
1N4007 UNITS
Volts
uAmps
30
uAmps
2002-11