RJK6015DPM_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 600V - 21A - MOS FET High Speed Power Switching

RJK6015DPM
600V - 21A - MOS FET
High Speed Power Switching
Features
 Low on-resistance
R_DS(on) = 0.315  typ. (at I_D = 10.5 A, V_GS = 10 V, Ta = 25 C)
 Low leakage current
 High speed switching
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
G
Preliminary Datasheet
R07DS0438EJ0200
(Previous: REJ03G1752-0100)
Rev.2.00
Jun 21, 2012
D
1. Gate
2. Drain
3. Source
1
2
3
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
V_DSS
V_GSS
I_DNote4
I_D
Note1
(pulse)
I_DR
I_DR
Note1
(pulse)
I_APNote3
E_ARNote3
Pch ^Note2
Channel to case thermal impedance
ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tc = 25C
3. STch = 25C, Tch  150C
4. Limited by maximum safe operation area
S
Ratings
600
±30
21
63
21
63
6
1.9
60
2.08
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0438EJ0200 Rev.2.00
Jun 21, 2012
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