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| RJK5031DPD_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching | |||
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RJK5031DPD
Silicon N Channel MOS FET
High Speed Power Switching
Features
ï· Low on-state resistance
RDS(on) = 2.4 ï typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25ï°C)
ï· High speed switching
Outline
RENESAS Package code: PRSS0004ZG-A
(Package name : MP-3A)
4
G
12 3
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Avalanche current
Channel dissipation
VDSS
VGSS
ID
ID (pulse) Note1
IAPNote3
Pch Note 2
Channel to case thermal Impedance
ï±ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Pulse width limited by safe operating area.
2. Value at Tc = 25ï°C
3. STch = 25ï°C, Tch ï£ 150ï°C
Preliminary Datasheet
R07DS0417EJ0200
Rev.2.00
Feb 24, 2012
D
1. Gate
2. Drain
3. Source
4. Drain
S
Value
500
ï±30
3
12
3
40.3
3.1
150
â55 to +150
(Ta = 25ï°C)
Unit
V
V
A
A
A
W
ï°C/W
ï°C
ï°C
R07DS0417EJ0200 Rev.2.00
Feb 24, 2012
Page 1 of 6
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